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MOSFETs DN3525N8-G
Microchip Technology
DN3525N8-G
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | No |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Flat |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Depletion |
| Channel Type | N |
| Configuration | Single Dual Drain |
| Package Width | 2.6(Max) |
| Package Height | 1.6(Max) |
| Package Length | 4.6(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SOT-89 |
| Maximum IDSS (uA) | 300000(Min) |
| Process Technology | VDMOS |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 40(Max) |
| Typical Rise Time (ns) | 25(Max) |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1600 |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 20 |
| Typical Turn-On Delay Time (ns) | 20(Max) |
| Maximum Drain Source Voltage (V) | 250 |
| Typical Gate Plateau Voltage (V) | 1.8 |
| Typical Turn-Off Delay Time (ns) | 25(Max) |
| Maximum Diode Forward Voltage (V) | 1.8 |
| Typical Reverse Recovery Time (ns) | 800 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.36 |
| Typical Input Capacitance @ Vds (pF) | 270@25V |
| Maximum Drain Source Resistance (MOhm) | 6000@0V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 1 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1.6 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 270@25V |
| Description |
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