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DN3765K4-G
DN3765K4-G
MOSFETs DN3765K4-G
Microchip Technology
DN3765K4-G
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Diodes, Transistors and Thyristors
MOSFETs
DN3765K4-G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeDepletion
Channel TypeN
ConfigurationSingle
Package Width6.1
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologyDMOS
Standard Package NameTO-252
Typical Fall Time (ns)100(Max)
Typical Rise Time (ns)75(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)50(Max)
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)75(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.3
Typical Input Capacitance @ Vds (pF)825(Max)@25V
Maximum Drain Source Resistance (MOhm)8000@0V
Description
Trans MOSFET N-CH Si 650V 0.3A 3-Pin(2+Tab) DPAK T/R
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