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MOSFETs ECH8601M-C-TL-H
onsemi
ECH8601M-C-TL-H
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeFlat
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Package Width2.3
Package Height0.93(Max)
Package Length2.9
Product CategoryPower MOSFET
Supplier PackageECH
Maximum IDSS (uA)1
Standard Package NameECH
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)1800
Typical Rise Time (ns)1000
Number of Elements per Chip2
Maximum Power Dissipation (mW)1600
Typical Gate Charge @ Vgs (nC)7.5@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)300
Maximum Drain Source Voltage (V)24
Typical Turn-Off Delay Time (ns)3000
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8
Maximum Drain Source Resistance (mOhm)23@4.5V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH Si 24V 8A 8-Pin ECH T/R
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