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MOSFETs EFC6601R-A-TR
onsemi
EFC6601R-A-TR
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Material | Si |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | No |
| Part Status | Obsolete |
| Channel Mode | Depletion |
| Channel Type | N |
| Configuration | Dual Dual Source Common Drain |
| Product Category | Power MOSFET |
| Typical Fall Time (ns) | 47000 |
| Typical Rise Time (ns) | 630 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Gate Charge @ Vgs (nC) | 48@4.5V |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Turn-On Delay Time (ns) | 280 |
| Typical Turn-Off Delay Time (ns) | 53000 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 13 |
| Maximum Drain Source Resistance (mOhm) | 11.5@4.5V |
| Maximum Gate Source Leakage Current (nA) | 1000 |
| Description |
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