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EFC6602R-TR
EFC6602R-TR
MOSFETs EFC6602R-TR
onsemi
EFC6602R-TR
--
Diodes, Transistors and Thyristors
MOSFETs
EFC6602R-TR.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeBall
PCB changed6
Part StatusNRND
Channel ModeDepletion
Channel TypeN
ConfigurationDual Dual Source Common Drain
Package Width1.81
Package Height0.22(Max)
Package Length2.7
Product CategoryPower MOSFET
Supplier PackageWLCSP
Typical Fall Time (ns)5500
Typical Rise Time (ns)2100
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ Vgs (nC)55@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)530
Typical Turn-Off Delay Time (ns)6200
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)18
Maximum Drain Source Resistance (mOhm)5.9@4.5V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans MOSFET N-CH Si 18A 6-Pin WLCSP T/R
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