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EFC6604R-TR
EFC6604R-TR
MOSFETs EFC6604R-TR
onsemi
EFC6604R-TR
--
Diodes, Transistors and Thyristors
MOSFETs
EFC6604R-TR.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeNo Lead
PCB changed6
Part StatusObsolete
Channel ModeDepletion
Channel TypeN
ConfigurationDual Dual Source
Package Width1.46
Package Height0.2
Package Length1.91
Product CategoryPower MOSFET
Supplier PackageEFCP
Typical Fall Time (ns)3900
Typical Rise Time (ns)1200
Number of Elements per Chip2
Maximum Power Dissipation (mW)1600
Typical Gate Charge @ Vgs (nC)29@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)300
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)5200
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)13
Maximum Drain Source Resistance (mOhm)9@4.5V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans MOSFET N-CH 12V 13A 6-Pin EFCP T/R
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