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EFC6612R-TF
EFC6612R-TF
MOSFETs EFC6612R-TF
onsemi
EFC6612R-TF
--
Diodes, Transistors and Thyristors
MOSFETs
EFC6612R-TF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusObsolete
Channel ModeDepletion
Channel TypeN
ConfigurationDual
Package Width1.77
Package Height0.22(Max)
Package Length3.54
Product CategoryPower MOSFET
Supplier PackageCSP
Maximum IDSS (uA)1
Standard Package NameBGA
Typical Fall Time (ns)92
Typical Rise Time (ns)640
Number of Elements per Chip2
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)27@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)30
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)11.8
Maximum Gate Threshold Voltage (V)1.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)23
Maximum Drain Source Resistance (mOhm)5.1@4.5V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans MOSFET N-CH 20V 23A 6-Pin CSP T/R
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