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EFC8811R-TF
EFC8811R-TF
MOSFETs EFC8811R-TF
onsemi
EFC8811R-TF
--
Diodes, Transistors and Thyristors
MOSFETs
EFC8811R-TF.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width1.77
Package Height0.22(Max)
Package Length3.54
Product CategoryPower MOSFET
Supplier PackageCSP
Maximum IDSS (uA)1
Typical Fall Time (ns)17700
Typical Rise Time (ns)570
Number of Elements per Chip2
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)100@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)80
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)38000
Maximum Gate Threshold Voltage (V)1.3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)27
Maximum Drain Source Resistance (MOhm)3.2@4.5V
Maximum Gate Source Leakage Current (nA)1000
Description
Trans MOSFET N-CH 12V 27A 6-Pin CSP T/R
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