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FCI11N60
FCI11N60
MOSFETs FCI11N60
onsemi
FCI11N60
--
Diodes, Transistors and Thyristors
MOSFETs
FCI11N60.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.5
Package Height9.2
Package Length9.9
Product CategoryPower MOSFET
Supplier PackageI2PAK
Standard Package NameTO-262
Typical Fall Time (ns)56
Typical Rise Time (ns)98
Number of Elements per Chip1
Maximum Power Dissipation (mW)125000
Typical Gate Charge @ 10V (nC)40
Typical Gate Charge @ Vgs (nC)40@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)34
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)119
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)11
Typical Input Capacitance @ Vds (pF)1148@25V
Maximum Drain Source Resistance (MOhm)380@10V
Description
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) I2PAK Rail
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