Product Attribute | Attribute Value |
HTS | 8541.29.00.95 |
Tab | Tab |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 3 |
Automotive | No |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 4.5 |
Package Height | 9.2 |
Package Length | 9.9 |
Product Category | Power MOSFET |
Supplier Package | I2PAK |
Maximum IDSS (uA) | 1 |
Process Technology | SuperFET |
Standard Package Name | TO-262 |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 32 |
Typical Rise Time (ns) | 55 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 83000 |
Typical Gate Charge @ 10V (nC) | 23 |
Typical Gate Charge @ Vgs (nC) | 23@10V |
Maximum Gate Source Voltage (V) | ±30 |
Typical Turn-On Delay Time (ns) | 35 |
Maximum Drain Source Voltage (V) | 600 |
Typical Turn-Off Delay Time (ns) | 75 |
Maximum Gate Threshold Voltage (V) | 5 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 7 |
Typical Input Capacitance @ Vds (pF) | 710@25V |
Maximum Drain Source Resistance (mOhm) | 600@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |