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FCMT360N65S3
FCMT360N65S3
MOSFETs FCMT360N65S3
onsemi
FCMT360N65S3
--
Diodes, Transistors and Thyristors
MOSFETs
FCMT360N65S3.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Triple Source
Package Width8
Package Height1.05(Max)
Package Length8
Product CategoryPower MOSFET
Supplier PackagePQFN EP
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)10
Typical Rise Time (ns)11
Number of Elements per Chip1
Maximum Power Dissipation (mW)83000
Typical Gate Charge @ 10V (nC)18
Typical Gate Charge @ Vgs (nC)18@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)34
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10
Typical Input Capacitance @ Vds (pF)730@400V
Maximum Drain Source Resistance (mOhm)360@10V
Description
Trans MOSFET N-CH 650V 10A 4-Pin PQFN EP T/R
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