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FCP190N65S3
FCP190N65S3
MOSFETs FCP190N65S3
onsemi
FCP190N65S3
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Diodes, Transistors and Thyristors
MOSFETs
FCP190N65S3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7(Max)
Package Height9.4(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Maximum IDSS (uA)1
Standard Package NameTO-220
Typical Fall Time (ns)16
Typical Rise Time (ns)22
Number of Elements per Chip1
Maximum Power Dissipation (mW)144000
Typical Gate Charge @ 10V (nC)33
Typical Gate Charge @ Vgs (nC)33@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)20
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)57
Maximum Gate Threshold Voltage (V)4.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)17
Typical Input Capacitance @ Vds (pF)1350@10V
Maximum Drain Source Resistance (mOhm)190@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 650V 17A 3-Pin(3+Tab) TO-220 Tube
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