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FCPF190N60E
FCPF190N60E
MOSFETs FCPF190N60E
onsemi
FCPF190N60E
--
Diodes, Transistors and Thyristors
MOSFETs
FCPF190N60E.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7
Package Height15.87
Package Length10.16
Product CategoryPower MOSFET
Supplier PackageTO-220FP
Maximum IDSS (uA)1
Process TechnologySuperFET II
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)15
Typical Rise Time (ns)14
Number of Elements per Chip1
Maximum Power Dissipation (mW)39000
Typical Gate Charge @ 10V (nC)63
Typical Gate Charge @ Vgs (nC)63@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)23
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)101
Maximum Gate Threshold Voltage (V)3.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)20.6
Typical Input Capacitance @ Vds (pF)2385@25V
Maximum Drain Source Resistance (mOhm)190@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 600V 20.6A 3-Pin(3+Tab) TO-220FP Tube
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