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FDA16N50LDTU
FDA16N50LDTU
MOSFETs FDA16N50LDTU
onsemi
FDA16N50LDTU
--
Diodes, Transistors and Thyristors
MOSFETs
FDA16N50LDTU.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTube
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Maximum IDSS (uA)20
Process TechnologyUniFET
Typical Fall Time (ns)80
Typical Rise Time (ns)150
Number of Elements per Chip1
Maximum Power Dissipation (mW)205000
Typical Gate Charge @ 10V (nC)32
Typical Gate Charge @ Vgs (nC)32@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)40
Maximum Drain Source Voltage (V)500
Typical Turn-Off Delay Time (ns)65
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)16.5
Typical Input Capacitance @ Vds (pF)1495@25V
Maximum Drain Source Resistance (mOhm)380@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 500V 16.5A Tube
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