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FDA18N50
FDA18N50
MOSFETs FDA18N50
onsemi
FDA18N50
--
Diodes, Transistors and Thyristors
MOSFETs
FDA18N50.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5(Max)
Package Height18.9(Max)
Package Length16.2(Max)
Product CategoryPower MOSFET
Supplier PackageTO-3P
Process TechnologyDMOS
Standard Package NameTO-3P
Typical Fall Time (ns)90
Typical Rise Time (ns)165
Number of Elements per Chip1
Maximum Power Dissipation (mW)239000
Typical Gate Charge @ 10V (nC)45
Typical Gate Charge @ Vgs (nC)45@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)55
Maximum Drain Source Voltage (V)500
Typical Turn-Off Delay Time (ns)95
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)19
Typical Input Capacitance @ Vds (pF)2200@25V
Maximum Drain Source Resistance (mOhm)265@10V
Description
Trans MOSFET N-CH 500V 19A 3-Pin(3+Tab) TO-3P Tube
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