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FDA50N50
FDA50N50
MOSFETs FDA50N50
onsemi
FDA50N50
--
Diodes, Transistors and Thyristors
MOSFETs
FDA50N50.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5(Max)
Package Height18.9(Max)
Package Length16.2(Max)
Product CategoryPower MOSFET
Supplier PackageTO-3P
Maximum IDSS (uA)25
Process TechnologyUniFET
Standard Package NameTO-3P
Typical Fall Time (ns)230
Typical Rise Time (ns)360
Number of Elements per Chip1
Maximum Power Dissipation (mW)625000
Typical Gate Charge @ 10V (nC)105
Typical Gate Charge @ Vgs (nC)105@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)105
Maximum Drain Source Voltage (V)500
Typical Turn-Off Delay Time (ns)225
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)48
Typical Input Capacitance @ Vds (pF)4979@25V
Maximum Drain Source Resistance (mOhm)105@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 500V 48A 3-Pin(3+Tab) TO-3P Tube
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