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FDB13AN06A0
FDB13AN06A0
MOSFETs FDB13AN06A0
onsemi
FDB13AN06A0
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Diodes, Transistors and Thyristors
MOSFETs
FDB13AN06A0.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyTMOS
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)26
Typical Rise Time (ns)96
Number of Elements per Chip1
Maximum Power Dissipation (mW)115000
Typical Gate Charge @ 10V (nC)22
Typical Gate Charge @ Vgs (nC)22@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)260
Typical Turn-On Delay Time (ns)9
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)44
Typical Gate to Drain Charge (nC)6.4
Maximum Gate Threshold Voltage (V)4
Typical Gate to Source Charge (nC)8.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10.9
Typical Input Capacitance @ Vds (pF)1350@25V
Typical Reverse Recovery Charge (nC)17(Max)
Maximum Drain Source Resistance (MOhm)13.5@10V
Description
Trans MOSFET N-CH 60V 10.9A 3-Pin(2+Tab) D2PAK T/R
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