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FDB33N25TM
FDB33N25TM
MOSFETs FDB33N25TM
onsemi
FDB33N25TM
--
Diodes, Transistors and Thyristors
MOSFETs
FDB33N25TM.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologyUniFET
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)120
Typical Rise Time (ns)230
Number of Elements per Chip1
Maximum Power Dissipation (mW)235000
Typical Gate Charge @ 10V (nC)36.8
Typical Gate Charge @ Vgs (nC)36.8@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)35
Maximum Drain Source Voltage (V)250
Typical Turn-Off Delay Time (ns)75
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)33
Typical Input Capacitance @ Vds (pF)1640@25V
Maximum Drain Source Resistance (mOhm)94@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 250V 33A 3-Pin(2+Tab) D2PAK T/R
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