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FDB6035AL
FDB6035AL
MOSFETs FDB6035AL
onsemi
FDB6035AL
--
Diodes, Transistors and Thyristors
MOSFETs
FDB6035AL.pdf
Specification
Product AttributeAttribute Value
HTS8541290095
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-263AB
Maximum IDSS (uA)1
Process TechnologyTMOS
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)12
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)52000
Typical Gate Charge @ Vgs (nC)13@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)29
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)48
Typical Input Capacitance @ Vds (pF)1250@15V
Maximum Drain Source Resistance (mOhm)12@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 48A 3-Pin(2+Tab) TO-263AB T/R
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