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FDB8030L
FDB8030L
MOSFETs FDB8030L
onsemi
FDB8030L
--
Diodes, Transistors and Thyristors
MOSFETs
FDB8030L.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)10
Process TechnologyPowerTrench
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)200
Typical Rise Time (ns)185
Number of Elements per Chip1
Maximum Power Dissipation (mW)187000
Typical Gate Charge @ 10V (nC)120
Typical Gate Charge @ Vgs (nC)120@5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)2700
Typical Turn-On Delay Time (ns)20
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)2.8
Typical Turn-Off Delay Time (ns)160
Maximum Diode Forward Voltage (V)1.3
Typical Diode Forward Voltage (V)1
Typical Gate to Drain Charge (nC)48
Maximum Gate Threshold Voltage (V)2
Minimum Gate Threshold Voltage (V)1
Typical Gate Threshold Voltage (V)1.5
Typical Gate to Source Charge (nC)27
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)80
Operating Junction Temperature (°C)-65 to 175
Typical Input Capacitance @ Vds (pF)10500@15V
Maximum Drain Source Resistance (mOhm)3.5@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)300
Typical Reverse Transfer Capacitance @ Vds (pF)1650@15V
Description
Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R
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