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FDB8896
FDB8896
MOSFETs FDB8896
onsemi
FDB8896
--
Diodes, Transistors and Thyristors
MOSFETs
FDB8896.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyTMOS
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)44
Typical Rise Time (ns)102
Number of Elements per Chip1
Maximum Power Dissipation (mW)80000
Typical Gate Charge @ 10V (nC)48
Typical Gate Charge @ Vgs (nC)48@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)9
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)58
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)19
Typical Input Capacitance @ Vds (pF)2525@15V
Maximum Drain Source Resistance (mOhm)5.7@10V
Description
Trans MOSFET N-CH 30V 19A 3-Pin(2+Tab) D2PAK T/R
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