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FDC5614P
FDC5614P
MOSFETs FDC5614P
onsemi
FDC5614P
--
Diodes, Transistors and Thyristors
MOSFETs
FDC5614P.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width1.6
Package Height0.85
Package Length2.9
Product CategoryPower MOSFET
Supplier PackageTSOT-23
Process TechnologyTMOS
Standard Package NameSOT
Typical Fall Time (ns)12
Typical Rise Time (ns)10
Number of Elements per Chip1
Maximum Power Dissipation (mW)1600
Typical Gate Charge @ 10V (nC)15
Typical Gate Charge @ Vgs (nC)15@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)90
Typical Turn-On Delay Time (ns)7
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)19
Typical Gate to Drain Charge (nC)3
Maximum Gate Threshold Voltage (V)3
Typical Gate to Source Charge (nC)2.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3
Typical Input Capacitance @ Vds (pF)759@30V
Maximum Drain Source Resistance (MOhm)105@10V
Description
Trans MOSFET P-CH 60V 3A 6-Pin TSOT-23 T/R
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