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FDC6321C
FDC6321C
MOSFETs FDC6321C
onsemi
FDC6321C
--
Diodes, Transistors and Thyristors
MOSFETs
FDC6321C.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual
Package Width1.6
Package Height0.85
Package Length2.9
Product CategoryPower MOSFET
Supplier PackageTSOT-23
Process TechnologyDMOS
Standard Package NameSOT
Typical Fall Time (ns)13@N Channel|35@P Channel
Typical Rise Time (ns)8@N Channel|9@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)900
Typical Gate Charge @ Vgs (nC)1.64@4.5V@N Channel|1.1@4.5V@P Channel
Maximum Gate Source Voltage (V)8@N Channel|-8@P Channel
Typical Turn-On Delay Time (ns)3@N Channel|7@P Channel
Maximum Drain Source Voltage (V)25
Typical Turn-Off Delay Time (ns)17@N Channel|55@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.68@N Channel|0.46@P Channel
Typical Input Capacitance @ Vds (pF)50@10V@N Channel|63@10V@P Channel
Maximum Drain Source Resistance (mOhm)450@4.5V@N Channel|1100@4.5V@P Channel
Description
Trans MOSFET N/P-CH 25V 0.68A/0.46A 6-Pin TSOT-23 T/R
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