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FDC6420C
FDC6420C
MOSFETs FDC6420C
onsemi
FDC6420C
--
Diodes, Transistors and Thyristors
MOSFETs
FDC6420C.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual
Package Width1.6
Package Height0.85
Package Length2.9
Product CategoryPower MOSFET
Supplier PackageTSOT-23
Process TechnologyTMOS
Standard Package NameSOT
Typical Fall Time (ns)1.6@N Channel|5@P Channel
Typical Rise Time (ns)7@N Channel|12@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)960
Typical Gate Charge @ Vgs (nC)3.3@4.5V@N Channel|3.7@4.5V@P Channel
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)5@N Channel|9@P Channel
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)13@N Channel|10@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3@N Channel|2.2@P Channel
Typical Input Capacitance @ Vds (pF)324@10V@N Channel|337@10V@P Channel
Maximum Drain Source Resistance (mOhm)70@4.5V@N Channel|125@4.5V@P Channel
Description
Trans MOSFET N/P-CH 20V 3A/2.2A 6-Pin TSOT-23 T/R
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