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FDC653N
FDC653N
MOSFETs FDC653N
onsemi
FDC653N
--
Diodes, Transistors and Thyristors
MOSFETs
FDC653N.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain
Package Width1.6
Package Height0.85
Package Length2.9
Product CategoryPower MOSFET
Supplier PackageTSOT-23
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameSOT
Typical Fall Time (ns)6
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)1600
Typical Gate Charge @ 10V (nC)12
Typical Gate Charge @ Vgs (nC)12@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)220
Typical Turn-On Delay Time (ns)7.5
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)3
Typical Turn-Off Delay Time (ns)13
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.75
Typical Gate to Drain Charge (nC)2.6
Maximum Gate Threshold Voltage (V)2
Minimum Gate Threshold Voltage (V)1
Typical Gate Threshold Voltage (V)1.7
Typical Gate to Source Charge (nC)2.1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)350@15V
Maximum Drain Source Resistance (mOhm)35@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)15
Maximum Power Dissipation on PCB @ TC=25°C (W)1.6
Typical Reverse Transfer Capacitance @ Vds (pF)80@15V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)5
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)156
Description
Trans MOSFET N-CH 30V 5A 6-Pin TSOT-23 T/R
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