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FDC855N
FDC855N
MOSFETs FDC855N
onsemi
FDC855N
--
Diodes, Transistors and Thyristors
MOSFETs
FDC855N.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain
Package Width1.6
Package Height0.85
Package Length2.9
Product CategoryPower MOSFET
Supplier PackageTSOT-23
Process TechnologyTMOS
Standard Package NameSOT
Typical Fall Time (ns)2
Typical Rise Time (ns)2
Number of Elements per Chip1
Maximum Power Dissipation (mW)1600
Typical Gate Charge @ 10V (nC)9.2
Typical Gate Charge @ Vgs (nC)9.2@10V|4.9@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)6
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)14
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.1
Typical Input Capacitance @ Vds (pF)493@15V
Maximum Drain Source Resistance (mOhm)27@10V
Description
Trans MOSFET N-CH 30V 6.1A 6-Pin TSOT-23 T/R
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