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FDD3670
FDD3670
MOSFETs FDD3670
onsemi
FDD3670
--
Diodes, Transistors and Thyristors
MOSFETs
FDD3670.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)10
Process TechnologyPowerTrench
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)25
Typical Rise Time (ns)10
Number of Elements per Chip1
Maximum Power Dissipation (mW)3800
Typical Gate Charge @ 10V (nC)57
Typical Gate Charge @ Vgs (nC)57@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)265
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)100
Typical Gate Plateau Voltage (V)4
Typical Turn-Off Delay Time (ns)56
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.72
Typical Gate to Drain Charge (nC)15
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate Threshold Voltage (V)2.5
Typical Gate to Source Charge (nC)11
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)34
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)2490@50V
Maximum Drain Source Resistance (mOhm)32@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)100
Maximum Power Dissipation on PCB @ TC=25°C (W)83
Typical Reverse Transfer Capacitance @ Vds (pF)80@50V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)34
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)96
Description
Trans MOSFET N-CH 100V 34A 3-Pin(2+Tab) DPAK T/R
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