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FDD3672
FDD3672
MOSFETs FDD3672
onsemi
FDD3672
--
Diodes, Transistors and Thyristors
MOSFETs
FDD3672.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)44
Typical Rise Time (ns)59
Number of Elements per Chip1
Maximum Power Dissipation (mW)135000
Typical Gate Charge @ 10V (nC)24
Typical Gate Charge @ Vgs (nC)24@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)26
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.5
Typical Input Capacitance @ Vds (pF)1710@25V
Maximum Drain Source Resistance (mOhm)28@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 6.5A 3-Pin(2+Tab) DPAK T/R
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