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FDD3682
FDD3682
MOSFETs FDD3682
onsemi
FDD3682
--
Diodes, Transistors and Thyristors
MOSFETs
FDD3682.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)26
Typical Rise Time (ns)46
Number of Elements per Chip1
Maximum Power Dissipation (mW)95000
Typical Gate Charge @ 10V (nC)18.5
Typical Gate Charge @ Vgs (nC)18.5@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)9
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)24
Maximum Diode Forward Voltage (V)1.25
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5.5
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)1250@25V
Maximum Drain Source Resistance (mOhm)36@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Description
Trans MOSFET N-CH 100V 5.5A Automotive 3-Pin(2+Tab) DPAK T/R
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