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FDD390N15A
FDD390N15A
MOSFETs FDD390N15A
onsemi
FDD390N15A
--
Diodes, Transistors and Thyristors
MOSFETs
FDD390N15A.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyPowerTrench
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)5
Typical Rise Time (ns)10
Number of Elements per Chip1
Maximum Power Dissipation (mW)63000
Typical Gate Charge @ 10V (nC)14.3
Typical Gate Charge @ Vgs (nC)14.3@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)96
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)150
Typical Gate Plateau Voltage (V)5.3
Typical Turn-Off Delay Time (ns)20
Maximum Diode Forward Voltage (V)1.25
Typical Gate to Drain Charge (nC)3.5
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)5
Typical Reverse Recovery Time (ns)63
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)26
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)965@75V
Typical Reverse Recovery Charge (nC)131
Maximum Drain Source Resistance (MOhm)40@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)104
Typical Reverse Transfer Capacitance @ Vds (pF)5.8@75V
Description
Trans MOSFET N-CH Si 150V 26A 3-Pin(2+Tab) DPAK T/R
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