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FDD3N50NZTM
FDD3N50NZTM
MOSFETs FDD3N50NZTM
onsemi
FDD3N50NZTM
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Diodes, Transistors and Thyristors
MOSFETs
FDD3N50NZTM.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyUniFET
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)17
Typical Rise Time (ns)15
Number of Elements per Chip1
Maximum Power Dissipation (mW)40000
Typical Gate Charge @ 10V (nC)6.2
Typical Gate Charge @ Vgs (nC)6.2@10V
Maximum Gate Source Voltage (V)±25
Typical Output Capacitance (pF)30
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)500
Typical Gate Plateau Voltage (V)6
Typical Turn-Off Delay Time (ns)26
Maximum Diode Forward Voltage (V)1.4
Typical Gate to Drain Charge (nC)3.1
Maximum Gate Threshold Voltage (V)5
Minimum Gate Threshold Voltage (V)3
Typical Gate to Source Charge (nC)1.4
Typical Reverse Recovery Time (ns)190
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.5
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)210@25V
Typical Reverse Recovery Charge (nC)520
Maximum Drain Source Resistance (mOhm)2500@10V
Maximum Gate Source Leakage Current (nA)10
Maximum Positive Gate Source Voltage (V)25
Maximum Pulsed Drain Current @ TC=25°C (A)10
Typical Reverse Transfer Capacitance @ Vds (pF)2.5@25V
Description
Trans MOSFET N-CH 500V 2.5A 3-Pin(2+Tab) DPAK T/R
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