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FDD4685
FDD4685
MOSFETs FDD4685
onsemi
FDD4685
--
Diodes, Transistors and Thyristors
MOSFETs
FDD4685.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyPowerTrench
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)14
Typical Rise Time (ns)15
Number of Elements per Chip1
Maximum Power Dissipation (mW)69000
Typical Gate Charge @ Vgs (nC)19@5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)260
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)40
Typical Gate Plateau Voltage (V)2.9
Typical Turn-Off Delay Time (ns)34
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.85
Typical Gate to Drain Charge (nC)6.1
Maximum Gate Threshold Voltage (V)3
Minimum Gate Threshold Voltage (V)1
Typical Gate Threshold Voltage (V)1.6
Typical Gate to Source Charge (nC)5.6
Typical Reverse Recovery Time (ns)30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8.4
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1790@20V
Typical Reverse Recovery Charge (nC)31
Maximum Drain Source Resistance (mOhm)27@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)100
Maximum Power Dissipation on PCB @ TC=25°C (W)3
Typical Reverse Transfer Capacitance @ Vds (pF)140@20V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)40
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)96
Description
Trans MOSFET P-CH Si 40V 8.4A 3-Pin(2+Tab) DPAK T/R
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