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FDD6680A
FDD6680A
MOSFETs FDD6680A
onsemi
FDD6680A
--
Diodes, Transistors and Thyristors
MOSFETs
FDD6680A.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.1
Package Height2.3
Package Length6.6
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameTO-252
Typical Fall Time (ns)13
Typical Rise Time (ns)9
Number of Elements per Chip1
Maximum Power Dissipation (mW)2800
Typical Gate Charge @ Vgs (nC)14@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)31
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)14
Typical Input Capacitance @ Vds (pF)1425@15V
Maximum Drain Source Resistance (MOhm)9.5@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 30V 14A 3-Pin(2+Tab) DPAK T/R
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