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FDD6N20TM
FDD6N20TM
MOSFETs FDD6N20TM
onsemi
FDD6N20TM
--
Diodes, Transistors and Thyristors
MOSFETs
FDD6N20TM.pdf
Specification
Product AttributeAttribute Value
HTS8541290095
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologyUniFET
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)12.8
Typical Rise Time (ns)5.6
Number of Elements per Chip1
Maximum Power Dissipation (mW)40000
Typical Gate Charge @ 10V (nC)4.7
Typical Gate Charge @ Vgs (nC)4.7@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)8.3
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)15
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.5
Typical Input Capacitance @ Vds (pF)170@25V
Maximum Drain Source Resistance (MOhm)800@10V
Description
Trans MOSFET N-CH 200V 4.5A 3-Pin(2+Tab) DPAK T/R
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