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FDD6N50TF
FDD6N50TF
MOSFETs FDD6N50TF
onsemi
FDD6N50TF
--
Diodes, Transistors and Thyristors
MOSFETs
FDD6N50TF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSSupplier Unconfirmed
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.1
Package Height2.3
Package Length6.6
Product CategoryPower MOSFET
Supplier PackageDPAK
Standard Package NameTO-252
Typical Fall Time (ns)35
Typical Rise Time (ns)55
Number of Elements per Chip1
Maximum Power Dissipation (mW)89000
Typical Gate Charge @ 10V (nC)12.8
Typical Gate Charge @ Vgs (nC)12.8@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)6
Maximum Drain Source Voltage (V)500
Typical Turn-Off Delay Time (ns)25
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6
Typical Input Capacitance @ Vds (pF)720@25V
Maximum Drain Source Resistance (MOhm)900@10V
Description
Trans MOSFET N-CH 500V 6A 3-Pin(2+Tab) DPAK T/R
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