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FDD6N50TM-WS
FDD6N50TM-WS
MOSFETs FDD6N50TM-WS
onsemi
FDD6N50TM-WS
--
Diodes, Transistors and Thyristors
MOSFETs
FDD6N50TM-WS.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyUniFET
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)35
Typical Rise Time (ns)55
Number of Elements per Chip1
Maximum Power Dissipation (mW)89000
Typical Gate Charge @ 10V (nC)12.8
Typical Gate Charge @ Vgs (nC)12.8@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)6
Maximum Drain Source Voltage (V)500
Typical Turn-Off Delay Time (ns)25
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6
Typical Input Capacitance @ Vds (pF)720@25V
Maximum Drain Source Resistance (mOhm)900@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 500V 6A 3-Pin(2+Tab) DPAK T/R
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