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FDD850N10LD
FDD850N10LD
MOSFETs FDD850N10LD
onsemi
FDD850N10LD
--
Diodes, Transistors and Thyristors
MOSFETs
FDD850N10LD.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
Lead ShapeGull-wing
PCB changed4
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)8
Typical Rise Time (ns)21
Number of Elements per Chip1
Maximum Power Dissipation (mW)42000
Typical Gate Charge @ 10V (nC)22.2
Typical Gate Charge @ Vgs (nC)22.2@10V|12.3@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)27
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)15.3
Typical Input Capacitance @ Vds (pF)1100@25V
Maximum Drain Source Resistance (MOhm)75@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 15.3A 5-Pin(4+Tab) DPAK T/R
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