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FDD86250
FDD86250
MOSFETs FDD86250
onsemi
FDD86250
--
Diodes, Transistors and Thyristors
MOSFETs
FDD86250.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologyTMOS
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)4
Typical Rise Time (ns)3.7
Supplier Temperature GradeCommercial
Number of Elements per Chip1
Maximum Power Dissipation (mW)3100
Typical Gate Charge @ 10V (nC)23
Typical Gate Charge @ Vgs (nC)23@10V|12.8@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)11.2
Maximum Drain Source Voltage (V)150
Typical Turn-Off Delay Time (ns)20
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8
Typical Input Capacitance @ Vds (pF)1585@75V
Maximum Drain Source Resistance (mOhm)22@10V
Description
Trans MOSFET N-CH Si 150V 8A 3-Pin(2+Tab) DPAK T/R
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