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FDD8870-SBSA002
FDD8870-SBSA002
MOSFETs FDD8870-SBSA002
onsemi
FDD8870-SBSA002
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSSupplier Unconfirmed
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Process TechnologyTMOS
Typical Fall Time (ns)42
Typical Rise Time (ns)83
Number of Elements per Chip1
Maximum Power Dissipation (mW)160000
Typical Gate Charge @ 10V (nC)91
Typical Gate Charge @ Vgs (nC)91@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)9
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)83
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)21
Typical Input Capacitance @ Vds (pF)5160@15V
Maximum Drain Source Resistance (mOhm)3.9@10V
Description
Trans MOSFET N-CH 30V 21A T/R
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