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FDD8880
FDD8880
MOSFETs FDD8880
onsemi
FDD8880
--
Diodes, Transistors and Thyristors
MOSFETs
FDD8880.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.22(Max)
Package Height2.39(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologyTMOS
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)32
Typical Rise Time (ns)91
Number of Elements per Chip1
Maximum Power Dissipation (mW)55000
Typical Gate Charge @ 10V (nC)23
Typical Gate Charge @ Vgs (nC)23@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)38
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)13
Typical Input Capacitance @ Vds (pF)1260@15V
Maximum Drain Source Resistance (MOhm)9@10V
Description
Trans MOSFET N-CH 30V 13A 3-Pin(2+Tab) DPAK T/R
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