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FDFMA2P859T
FDFMA2P859T
MOSFETs FDFMA2P859T
onsemi
FDFMA2P859T
--
Diodes, Transistors and Thyristors
MOSFETs
FDFMA2P859T.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Product CategoryPower MOSFET
Typical Fall Time (ns)6
Typical Rise Time (ns)11
Number of Elements per Chip1
Maximum Power Dissipation (mW)1400
Typical Gate Charge @ Vgs (nC)4@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)9
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)15
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3
Typical Input Capacitance @ Vds (pF)435@10V
Maximum Drain Source Resistance (MOhm)120@4.5V
Description
Trans MOSFET P-CH 20V 3A T/R
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