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FDG315N
FDG315N
MOSFETs FDG315N
onsemi
FDG315N
--
Diodes, Transistors and Thyristors
MOSFETs
FDG315N.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain
Package Width1.25
Package Height0.9
Package Length2
Product CategoryPower MOSFET
Supplier PackageSC-88
Process TechnologyTMOS
Standard Package NameSC
Typical Fall Time (ns)3
Typical Rise Time (ns)11
Number of Elements per Chip1
Maximum Power Dissipation (mW)750
Typical Gate Charge @ Vgs (nC)2.1@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)3
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)7
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2
Typical Input Capacitance @ Vds (pF)220@15V
Maximum Drain Source Resistance (mOhm)120@10V
Description
Trans MOSFET N-CH 30V 2A 6-Pin SC-88 T/R
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