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FDG326P
FDG326P
MOSFETs FDG326P
onsemi
FDG326P
--
Diodes, Transistors and Thyristors
MOSFETs
FDG326P.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width1.25
Package Height1(Max)
Package Length2
Product CategoryPower MOSFET
Supplier PackageSC-70
Standard Package NameSOT
Typical Fall Time (ns)8
Typical Rise Time (ns)13
Number of Elements per Chip1
Maximum Power Dissipation (mW)750
Typical Gate Charge @ Vgs (nC)4.4@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)18
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)1.5
Typical Input Capacitance @ Vds (pF)467@10V
Maximum Drain Source Resistance (mOhm)140@4.5V
Description
Trans MOSFET P-CH 20V 1.5A 6-Pin SC-70 T/R
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