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MOSFETs FDG6332C-F085
onsemi
FDG6332C-F085
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Yes |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | P|N |
| Configuration | Dual |
| Package Width | 1.25 |
| Package Height | 1(Max) |
| Package Length | 2 |
| Product Category | Power MOSFET |
| Supplier Package | SC-70 |
| Maximum IDSS (uA) | 1 |
| Process Technology | PowerTrench |
| Standard Package Name | SOT-323 |
| Typical Fall Time (ns) | 1.7@Q 2|1.5@Q 1 |
| Typical Rise Time (ns) | 14@Q 2|7@Q 1 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 300 |
| Typical Gate Charge @ 10V (nC) | 1.4 |
| Typical Gate Charge @ Vgs (nC) | 1.4@4.5V@Q 2|1.1@4.5V@Q 1 |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Output Capacitance (pF) | 24@Q 2|34@Q 1 |
| Typical Turn-On Delay Time (ns) | 5.5@Q 2|5@Q 1 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 2@P Channel|1.8@N Channel |
| Typical Turn-Off Delay Time (ns) | 6@Q 2|9@Q 1 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.77@Q 2|0.74@Q 1 |
| Typical Gate to Drain Charge (nC) | 0.4@Q 2|0.3@Q 1 |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Minimum Gate Threshold Voltage (V) | 0.6 |
| Typical Gate Threshold Voltage (V) | 1.2@Q 2|1.1@Q 1 |
| Typical Gate to Source Charge (nC) | 0.3@Q 2|0.24@Q 1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.6@Q 2|0.7@Q 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 114@10V@Q 2|113@10V@Q 1 |
| Maximum Drain Source Resistance (mOhm) | 420@4.5V@Q 2|300@4.5V@Q 1 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 12 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 2@Q 2|2.1@Q 1 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.3 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 9@10V@Q 2|16@10V@Q 1 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 0.6@Q 2|0.7@Q 1 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 415 |
| Description |
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