Product Attribute | Attribute Value |
PPAP | Yes |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 3 |
Automotive | Yes |
Lead Shape | Through Hole |
PCB changed | 3 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Product Category | Power MOSFET |
Supplier Package | TO-262AB |
Maximum IDSS (uA) | 1 |
Process Technology | TMOS |
Standard Package Name | TO-262AB |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 20 |
Typical Rise Time (ns) | 48 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 176000 |
Typical Gate Charge @ 10V (nC) | 107 |
Typical Gate Charge @ Vgs (nC) | 107@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 28 |
Maximum Drain Source Voltage (V) | 40 |
Typical Turn-Off Delay Time (ns) | 50 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 110 |
Typical Input Capacitance @ Vds (pF) | 7710@25V |
Maximum Drain Source Resistance (MOhm) | 2.2@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |