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FDL100N50F
FDL100N50F
MOSFETs FDL100N50F
onsemi
FDL100N50F
--
Diodes, Transistors and Thyristors
MOSFETs
FDL100N50F.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.2(Max)
Package Height26.4(Max)
Package Length20.2(Max)
Product CategoryPower MOSFET
Supplier PackageTO-264AA
Process TechnologyUniFET
Typical Fall Time (ns)105
Typical Rise Time (ns)186
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500000
Typical Gate Charge @ 10V (nC)238
Typical Gate Charge @ Vgs (nC)238@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)63
Maximum Drain Source Voltage (V)500
Typical Turn-Off Delay Time (ns)202
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)100
Typical Input Capacitance @ Vds (pF)12000@25V
Maximum Drain Source Resistance (mOhm)55@10V
Description
Trans MOSFET N-CH 500V 100A 3-Pin(3+Tab) TO-264AA Tube
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