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Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 6 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual |
| Package Width | 2 |
| Package Height | 0.75 |
| Package Length | 2 |
| Product Category | Power MOSFET |
| Supplier Package | WDFN EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | PowerTrench |
| Standard Package Name | DFN |
| Typical Fall Time (ns) | 3@N Channel|36@P Channel |
| Typical Rise Time (ns) | 8@N Channel|11@P Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1400 |
| Typical Gate Charge @ Vgs (nC) | 4@4.5V@N Channel|7@4.5V@P Channel |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Output Capacitance (pF) | 80@N Channel|120@P Channel |
| Typical Turn-On Delay Time (ns) | 8@N Channel|13@P Channel |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Gate Plateau Voltage (V) | 1.9 |
| Typical Turn-Off Delay Time (ns) | 14@N Channel|37@P Channel |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.7@N Channel|0.8@P Channel |
| Typical Gate to Drain Charge (nC) | 1.1@N Channel|2.4@P Channel |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Minimum Gate Threshold Voltage (V) | 0.6 |
| Typical Gate Threshold Voltage (V) | 1 |
| Typical Gate to Source Charge (nC) | 0.7@N Channel|1.1@P Channel |
| Typical Reverse Recovery Time (ns) | 11@N Channel|25@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.7@N Channel|3.1@P Channel |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 340@10V@N Channel|540@10V@P Channel |
| Typical Reverse Recovery Charge (nC) | 2@N Channel|9@P Channel |
| Maximum Drain Source Resistance (MOhm) | 68@4.5V@N Channel|95@4.5V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum Positive Gate Source Voltage (V) | 12 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 6 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1.4 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 60@10V@N Channel|100@10V@P Channel |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 3.7@N Channel|3.1@P Channel |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 173 |
| Description |
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