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FDMA530PZ
FDMA530PZ
MOSFETs FDMA530PZ
onsemi
FDMA530PZ
--
Diodes, Transistors and Thyristors
MOSFETs
FDMA530PZ.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeNo Lead
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain
Package Width2
Package Height0.75
Package Length2
Product CategoryPower MOSFET
Supplier PackageWDFN EP
Maximum IDSS (uA)1
Process TechnologyPowerTrench
Standard Package NameDFN
Typical Fall Time (ns)31
Typical Rise Time (ns)21
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)38
Minimum Gate Resistance (Ohm)1
Maximum Power Dissipation (mW)2400
Typical Gate Charge @ 10V (nC)16
Typical Gate Charge @ Vgs (nC)16@10V
Maximum Gate Source Voltage (V)±25
Typical Output Capacitance (pF)155
Typical Turn-On Delay Time (ns)6
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)3.9
Typical Turn-Off Delay Time (ns)43
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.8
Typical Gate to Drain Charge (nC)4.5
Maximum Gate Threshold Voltage (V)3
Minimum Gate Threshold Voltage (V)1
Typical Gate Threshold Voltage (V)2.1
Typical Gate to Source Charge (nC)3.1
Typical Reverse Recovery Time (ns)24
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.8
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)805@15V
Typical Reverse Recovery Charge (nC)19
Maximum Drain Source Resistance (MOhm)35@10V
Maximum Gate Source Leakage Current (nA)10000
Maximum Positive Gate Source Voltage (V)25
Maximum Pulsed Drain Current @ TC=25°C (A)24
Typical Reverse Transfer Capacitance @ Vds (pF)130@15V
Description
Trans MOSFET P-CH 30V 6.8A 6-Pin WDFN EP T/R
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