HTS | 8541.29.00.95 |
PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 6 |
Automotive | No |
Lead Shape | No Lead |
PCB changed | 6 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single Quad Drain |
Package Width | 2 |
Package Height | 0.75 |
Package Length | 2 |
Product Category | Power MOSFET |
Supplier Package | WDFN EP |
Maximum IDSS (uA) | 1 |
Process Technology | PowerTrench |
Standard Package Name | DFN |
Typical Fall Time (ns) | 31 |
Typical Rise Time (ns) | 21 |
Number of Elements per Chip | 1 |
Maximum Gate Resistance (Ohm) | 38 |
Minimum Gate Resistance (Ohm) | 1 |
Maximum Power Dissipation (mW) | 2400 |
Typical Gate Charge @ 10V (nC) | 16 |
Typical Gate Charge @ Vgs (nC) | 16@10V |
Maximum Gate Source Voltage (V) | ±25 |
Typical Output Capacitance (pF) | 155 |
Typical Turn-On Delay Time (ns) | 6 |
Maximum Drain Source Voltage (V) | 30 |
Typical Gate Plateau Voltage (V) | 3.9 |
Typical Turn-Off Delay Time (ns) | 43 |
Maximum Diode Forward Voltage (V) | 1.2 |
Typical Diode Forward Voltage (V) | 0.8 |
Typical Gate to Drain Charge (nC) | 4.5 |
Maximum Gate Threshold Voltage (V) | 3 |
Minimum Gate Threshold Voltage (V) | 1 |
Typical Gate Threshold Voltage (V) | 2.1 |
Typical Gate to Source Charge (nC) | 3.1 |
Typical Reverse Recovery Time (ns) | 24 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 6.8 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 805@15V |
Typical Reverse Recovery Charge (nC) | 19 |
Maximum Drain Source Resistance (MOhm) | 35@10V |
Maximum Gate Source Leakage Current (nA) | 10000 |
Maximum Positive Gate Source Voltage (V) | 25 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 24 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 130@15V |
Description | |