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FDMB3800N
FDMB3800N
MOSFETs FDMB3800N
onsemi
FDMB3800N
--
Diodes, Transistors and Thyristors
MOSFETs
FDMB3800N.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Package Width1.9
Package Height0.75(Max)
Package Length3
Product CategoryPower MOSFET
Supplier PackageWDFN EP
Maximum IDSS (uA)1
Process TechnologyPowerTrench
Standard Package NameDFN
Typical Fall Time (ns)2
Typical Rise Time (ns)5
Number of Elements per Chip2
Maximum Power Dissipation (mW)1600
Typical Gate Charge @ Vgs (nC)4@5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)90
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)2.9
Typical Turn-Off Delay Time (ns)21
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.8
Typical Gate to Drain Charge (nC)1.5
Maximum Gate Threshold Voltage (V)3
Minimum Gate Threshold Voltage (V)1
Typical Gate Threshold Voltage (V)1.9
Typical Gate to Source Charge (nC)1
Typical Reverse Recovery Time (ns)17
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.8
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)350@15V
Typical Reverse Recovery Charge (nC)7
Maximum Drain Source Resistance (mOhm)40@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)9
Maximum Power Dissipation on PCB @ TC=25°C (W)1.6
Typical Reverse Transfer Capacitance @ Vds (pF)40@15V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)4.8
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)165
Description
Trans MOSFET N-CH 30V 4.8A 8-Pin WDFN EP T/R
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