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FDMC007N30D
FDMC007N30D
MOSFETs FDMC007N30D
onsemi
FDMC007N30D
--
Diodes, Transistors and Thyristors
MOSFETs
FDMC007N30D.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width3
Package Height0.75(Max)
Package Length3
Product CategoryPower MOSFET
Supplier PackageWDFN EP
Typical Fall Time (ns)3@Q 2|2@Q 1
Typical Rise Time (ns)2@Q 1|3@Q 2
Number of Elements per Chip2
Maximum Power Dissipation (mW)2500@Q 2|1900@Q 1
Typical Gate Charge @ 10V (nC)12@Q 1|24@Q 2
Typical Gate Charge @ Vgs (nC)12@10V|5.5@4.5V@Q 1|24@10V|11@4.5V@Q 2
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)10@Q 2|7@Q 1
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)24@Q 2|19@Q 1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10@Q 1|16@Q 2
Typical Input Capacitance @ Vds (pF)792@15V@Q 1|1685@15V@Q 2
Maximum Drain Source Resistance (mOhm)11.6@10V@Q 1|6.4@10V@Q 2
Description
Trans MOSFET N-CH 30V 10A/16A 8-Pin WDFN EP T/R
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